Limiting factors for the growth rate of epitaxial III-V compound semiconductors

DAFS Study of Strained III-V Epitaxial Semiconductors

The effect of built-in strain on IlI-V epitaxial semiconductors has been investigated by Diffraction Anomalous Fine Smcture (DAFS). We study two different systems in a different strain regime: a Strained Layer Superlattice of (GaP)2(InP)3 grown on a GaAs(001) substrate, and a single epilayer of G a A ~ l ~ p ~ , (x=0.225), also grown on a GaAs (001) substrate. In the first case the strain is ac...

Modified Wurtzite Structure Oxide Compounds as Substrates for III-V Nitride Compound Semiconductor Epitaxial Growth

Progress in Antimonide Based III-V Compound Semiconductors and Devices

In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devic...

III–V compound semiconductors for mass-produced nano-electronics: theoretical studies on mobility degradation by dislocation

As silicon-based electronics approach the limit of scaling for increasing the performance and chip density, III-V compound semiconductors have started to attract significant attention owing to their high carrier mobility. However, the mobility benefits of III-V compounds are too easily accepted, ignoring a harmful effect of unavoidable threading dislocations that could fundamentally limit the a...

Unexpected benefits of rapid growth rate for III-V nanowires.

In conventional planar growth of bulk III-V materials, a slow growth rate favors high crystallographic quality, optical quality, and purity of the resulting material. Surprisingly, we observe exactly the opposite effect for Au-assisted GaAs nanowire growth. By employing a rapid growth rate, the resulting nanowires are markedly less tapered, are free of planar crystallographic defects, and have ...